Technical parameters/dissipated power: 340W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 2700pF @25V(Vds)
Technical parameters/dissipated power (Max): 340W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFB17N60K
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 600V 17A TO-220AB
|
|||
IRFB17N60K
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 600V 17A TO-220AB
|
||
IRFB17N60KPBF
|
VISHAY | 功能相似 | TO-220 |
Power Field-Effect Transistor, 17A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
|
||
IRFB17N60KPBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 17A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
|
||
IRFB17N60KPBF
|
Vishay Semiconductor | 功能相似 |
Power Field-Effect Transistor, 17A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
|
|||
|
|
Vishay Siliconix | 功能相似 | TO-220 |
TRANSISTOR 17 A, 600 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power
|
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