Technical parameters/rated power: 74 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 74 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 660pF @25V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 3.60 A
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 660pF @25V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 74 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP3NK60Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP3NK60Z 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.6 ohm, 10 V, 3.75 V
|
||
STP4NK60Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP4NK60Z 功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
|
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