Encapsulation parameters/Encapsulation: I2PAK-3
External dimensions/packaging: I2PAK-3
Other/궟동: Single
Other/Case/Package: I2PAK-3
Other/Packaging: Tube
Other/Brand: Vishay / Siliconix
Other/동착 동: Through Hole
Other/Soft 랜イ동터극동: N-Channel
Other/Channel Mode: Enhancement
Other/하강 Economy: 30 ns
Other/Id - Link Files: 4.1 A
Other/Delete 동업체: Vishay
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
Other/Pd - 력발산: 125 W
Other/Delete 품카테 High speed: Single-Gate MOSFET Transistors
Other/RDs On - Drain Source 저항: 3 Ohms
Other/상승クク: 33 ns
Other/Standard Pack Qty: 50
Other/표준오프い Contact Us: 82 ns
Other/Vds - 레イ?동항복압: 800 V
Other/Vgs - 게イプ - ?동항복압: 20 V
Other/RoHS: Non-Compliant
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBE30L
|
International Rectifier | 完全替代 | TO-262 |
MOSFET N-CH 800V 4.1A TO-262
|
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