Technical parameters/rise time: 17 ns
Technical parameters/Input capacitance (Ciss): 530pF @25V(Vds)
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 54000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBE20PBF
|
LiteOn | 完全替代 | TO-220-3 |
MOSFET N-CH 800V 1.8A TO-220AB
|
||
IRFBE20PBF
|
Infineon | 完全替代 |
MOSFET N-CH 800V 1.8A TO-220AB
|
|||
IRFBE20PBF
|
International Rectifier | 完全替代 | TO-220-3 |
MOSFET N-CH 800V 1.8A TO-220AB
|
||
STP2N80
|
ST Microelectronics | 功能相似 | TO-220 |
N - 沟道增强型功率MOS晶体管 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
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