Chip AI consultant
Encapsulation parameters/Encapsulation: I2PAK-3
External dimensions/packaging: I2PAK-3
Other/궟동: Single
Other/Case/Package: I2PAK-3
Other/Packaging: Tube
Other/Brand: Vishay / Siliconix
Other/동착 동: Through Hole
Other/Soft 랜イ동터극동: N-Channel
Other/Channel Mode: Enhancement
Other/하강 Economy: 25 ns
Other/Id - Link Files: 2.2 A
Other/Delete 동업체: Vishay
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
Other/Pd - 력발산: 3.1 W
Other/Delete 품카테 High speed: Single-Gate MOSFET Transistors
Other/RDs On - Drain Source 저항: 4.4 Ohms
Other/상승クク: 23 ns
Other/Standard Pack Qty: 1000
Other/표준오프い Contact Us: 30 ns
Other/Vds - 레イ?동항복압: 600 V
Other/Vgs - 게イプ - ?동항복압: 20 V
Other/RoHS: Non-Compliant
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF830ALPBF
|
International Rectifier | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
||
IRF830ALPBF
|
Vishay Semiconductor | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
||
IRF830ALPBF
|
VISHAY | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
||
STI13NM60N
|
ST Microelectronics | 功能相似 | TO-262-3 |
STMICROELECTRONICS STI13NM60N 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review