Technical parameters/rated power: 2.5 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.048 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF9335
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -5.40 A
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 386pF @25V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Battery Protection, Load Switch Low Side, Load Switch High Side
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9335PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF9335PBF 晶体管, MOSFET, P沟道, -5.4 A, -30 V, 48 mohm, -10 V, -1.8 V
|
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