Technical parameters/drain source resistance: 250 mΩ
Technical parameters/dissipated power: 280000 mW
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 74 ns
Technical parameters/Input capacitance (Ciss): 2870pF @25V(Vds)
Technical parameters/descent time: 33 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 280W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFB20N50K
|
International Rectifier | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
||
IRFB20N50K
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
||
|
|
VISHAY | 完全替代 |
Mosfet n-Channel 500V
|
|||
SIHFB20N50K-E3
|
Vishay Semiconductor | 完全替代 |
Mosfet n-Channel 500V
|
|||
STP20NK50Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP20NK50Z 晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V
|
||
STP23NM50N
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review