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Model IRFB20N50KPBF
Description 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Product QR code
Brand: International Rectifier
Packaging TO-220
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1840) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 500 V

Technical parameters/rated current: 20.0 A

Technical parameters/polarity: N-Channel

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/Continuous drain current (Ids): 20.0 A

Technical parameters/rise time: 74.0 ns

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFB20N50K IRFB20N50K International Rectifier 功能相似 TO-220-3
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
IRFB20N50K IRFB20N50K Vishay Siliconix 功能相似 TO-220-3
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
SIHFB20N50K-E3 SIHFB20N50K-E3 VISHAY 完全替代
Mosfet n-Channel 500V
SIHFB20N50K-E3 SIHFB20N50K-E3 Vishay Semiconductor 完全替代
Mosfet n-Channel 500V
PDF
STP20NK50Z STP20NK50Z ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP20NK50Z 晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V
PDF
STP23NM50N STP23NM50N ST Microelectronics 功能相似 TO-220-3
N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
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