Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 11.0 A
Technical parameters/rated power: 170 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.52 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 170 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 1423pF @25V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 11.0 A
Technical parameters/rise time: 35.0 ns
Technical parameters/Input capacitance (Ciss): 1423pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 170 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP12NM50
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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