Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 10A
Technical parameters/rise time: 49 ns
Technical parameters/descent time: 60 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7416PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
|
||
IRF7416PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
|
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