Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 8.90 A
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 20.0 V
Technical parameters/Continuous drain current (Ids): 8.90 A
Technical parameters/rise time: 12.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF8915TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF8915TRPBF 双路场效应管, MOSFET, 双N沟道, 8.9 A, 20 V, 0.0146 ohm, 10 V, 2.5 V 新
|
||
IRF8915TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF8915TRPBF 双路场效应管, MOSFET, 双N沟道, 8.9 A, 20 V, 0.0146 ohm, 10 V, 2.5 V 新
|
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