Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 2.50 A
Technical parameters/drain source resistance: 3 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 360pF @25V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/rise time: 8.6 ns
Technical parameters/Input capacitance (Ciss): 360pF @25V(Vds)
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.67 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF820STRLPBF
|
Vishay Semiconductor | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 2.5A D2PAK
|
||
IRF820STRR
|
VISHAY | 完全替代 | D2PAK |
MOSFET N-CH 500V 2.5A D2PAK
|
||
|
|
Vishay Intertechnology | 完全替代 |
MOSFET N-CH 500V 2.5A D2PAK
|
|||
IRF820STRRPBF
|
Vishay Semiconductor | 完全替代 | TO-263 |
MOSFET N-CH 500V 2.5A D2PAK
|
||
IRF820STRRPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 2.5A D2PAK
|
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