Technical parameters/rated power: 2.5 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0055 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 2.25 V
Technical parameters/input capacitance: 2080 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 16A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 2080pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 3.7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7805ZPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7805ZPBF 晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0055 ohm, 10 V, 2.25 V
|
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