Technical parameters/rated power: 125 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0028 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.3 W
Technical parameters/threshold voltage: 2.7 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 20A
Technical parameters/rise time: 32 ns
Technical parameters/Input capacitance (Ciss): 11560pF @25V(Vds)
Technical parameters/descent time: 41 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.3W (Ta), 125W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 15
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/length: 9.15 mm
External dimensions/width: 7.1 mm
External dimensions/height: 0.74 mm
External dimensions/packaging: Direct-FET
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7769L2TR1PBF
|
International Rectifier | 功能相似 | DirectFET™ Isometric L8 |
Direct-FET N-CH 100V 20A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review