Technical parameters/rated power: 1.25 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.27 Ω
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 700 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 1.7A
Technical parameters/Input capacitance (Ciss): 240pF @15V(Vds)
Technical parameters/rated power (Max): 1.25 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.25 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: Micro-8
External dimensions/length: 3 mm
External dimensions/width: 3 mm
External dimensions/height: 0.86 mm
External dimensions/packaging: Micro-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7104TRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7104TRPBF 双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 0.19 ohm, -10 V, -3 V
|
||
IRF7506TRPBF
|
International Rectifier | 类似代替 | TSSOP-8 |
INFINEON IRF7506TRPBF 双路场效应管, MOSFET, 双P沟道, -1.7 A, -30 V, 270 mohm, -10 V, -1 V
|
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