Technical parameters/drain source resistance: 550 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 1030pF @25V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF740S
|
Vishay Semiconductor | 功能相似 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - D2PAK的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET
|
|||
IRF740ST4
|
ST Microelectronics | 功能相似 | D2PAK |
晶体管| MOSFET | N沟道| 400V V( BR ) DSS | 10A I( D) | TO- 263AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB
|
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