Technical parameters/drain source resistance: 0.17 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/product series: IRF7342Q
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): -3.40 A
Technical parameters/Input capacitance (Ciss): 690pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -50℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4943BDY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
双P通道20 - V(D -S)的MOSFET Dual P-Channel 20-V (D-S) MOSFET
|
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