Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 16.0 A
Technical parameters/drain source resistance: 4.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 42.0 W
Technical parameters/product series: IRF6626
Technical parameters/input capacitance: 2.38 nF
Technical parameters/gate charge: 29.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 13.0 A
Technical parameters/rise time: 15.0 ns
Technical parameters/Input capacitance (Ciss): 2380pF @15V(Vds)
Technical parameters/rated power (Max): 2.2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: DirectFET™ Isometric ST
External dimensions/packaging: DirectFET™ Isometric ST
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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