Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 13.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 42.0 W
Technical parameters/product series: IRF6631
Technical parameters/input capacitance: 1.45 nF
Technical parameters/gate charge: 18.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 13.0 A, 10.0 A
Technical parameters/rise time: 18.0 ns
Technical parameters/Input capacitance (Ciss): 1450pF @15V(Vds)
Technical parameters/rated power (Max): 2.2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: DirectFET-2
External dimensions/packaging: DirectFET-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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