Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 9.20 A
Technical parameters/drain source resistance: 270 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60.0 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 9.20 A
Technical parameters/rise time: 30 ns
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 60000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF520NPBF
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF520NPBF 场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB 新
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IRF520NPBF
|
Arduino | 功能相似 |
INTERNATIONAL RECTIFIER IRF520NPBF 场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB 新
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IRF520NPBF
|
International Rectifier | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF520NPBF 场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB 新
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