Technical parameters/rated power: 42 W
Technical parameters/drain source resistance: 10.3 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 42 W
Technical parameters/product series: IRF6722S
Technical parameters/input capacitance: 1320pF @15V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 13.0 A
Technical parameters/Input capacitance (Ciss): 1320pF @15V(Vds)
Technical parameters/rated power (Max): 2.2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: DirectFET™ Isometric ST
External dimensions/length: 4.85 mm
External dimensions/height: 0.506 mm
External dimensions/packaging: DirectFET™ Isometric ST
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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