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Model IRF6668TR1PBF
Description MOSFET，Infineon D Class amplifiers are rapidly becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplifies the design of efficient D-class amplifiers. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
Product QR code
Brand: International Rectifier
Packaging DirectFET™ Isometric MZ
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
9.5  yuan 9.5yuan
10+:
$ 11.3940
100+:
$ 10.8243
500+:
$ 10.4445
1000+:
$ 10.4255
2000+:
$ 10.3496
5000+:
$ 10.2546
7500+:
$ 10.1786
10000+:
$ 10.1407
Quantity
10+
100+
500+
1000+
2000+
Price
$11.3940
$10.8243
$10.4445
$10.4255
$10.3496
Price $ 11.3940 $ 10.8243 $ 10.4445 $ 10.4255 $ 10.3496
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6783) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 80.0 V

Technical parameters/rated current: 55.0 A

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.80 mW

Technical parameters/product series: IRF6668

Technical parameters/input capacitance: 1.32 nF

Technical parameters/gate charge: 31.0 nC

Technical parameters/drain source voltage (Vds): 80 V

Technical parameters/leakage source breakdown voltage: 80.0 V

Technical parameters/Continuous drain current (Ids): 44.0 A

Technical parameters/rise time: 13.0 ns

Technical parameters/Input capacitance (Ciss): 1320pF @25V(Vds)

Technical parameters/rated power (Max): 2.8 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 89 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: DirectFET™ Isometric MZ

External dimensions/length: 6.35 mm

External dimensions/width: 5.05 mm

External dimensions/height: 0.676 mm

External dimensions/packaging: DirectFET™ Isometric MZ

Other/Product Lifecycle: Active

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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