Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 12.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.80 W
Technical parameters/product series: IRF6646
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80.0 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/rise time: 20.0 ns
Technical parameters/Input capacitance (Ciss): 2060pF @25V(Vds)
Technical parameters/rated power (Max): 2.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: DirectFET™ Isometric MN
External dimensions/packaging: DirectFET™ Isometric MN
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review