Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 55.0 A
Technical parameters/drain source resistance: 7.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.1 W
Technical parameters/product series: IRF6608
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 9.40 A
Technical parameters/rise time: 12.0 ns
Technical parameters/Input capacitance (Ciss): 2120pF @15V(Vds)
Technical parameters/rated power (Max): 2.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/packaging: Direct-FET
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
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