Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 16.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 5.4 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.2 W
Technical parameters/product series: IRF6626
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 16.0 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 2380pF @15V(Vds)
Technical parameters/descent time: 4.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/dissipated power (Max): 2.2W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DirectFET-ST
External dimensions/length: 4.85 mm
External dimensions/width: 3.95 mm
External dimensions/height: 0.7 mm
External dimensions/packaging: DirectFET-ST
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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