Technical parameters/rated voltage (DC): 250 V
Technical parameters/rated current: 14.0 A
Technical parameters/drain source resistance: 280 mΩ (max)
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250V (min)
Technical parameters/Continuous drain current (Ids): 14.0 A
Technical parameters/rise time: 24.0 ns
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/rated power (Max): 125 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF644
|
ST Microelectronics | 功能相似 | TO-220-3 |
MOSFET N-CH 250V 14A TO-220AB
|
||
IRF644
|
Major Brands | 功能相似 |
MOSFET N-CH 250V 14A TO-220AB
|
|||
IRF644
|
Harris | 功能相似 | TO-220AB |
MOSFET N-CH 250V 14A TO-220AB
|
||
IRF644
|
VISHAY | 功能相似 | TO-220-3 |
MOSFET N-CH 250V 14A TO-220AB
|
||
IRF644
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 250V 14A TO-220AB
|
|||
IRF644PBF
|
International Rectifier | 功能相似 | TO-220 |
Trans MOSFET N-CH 250V 14A 3Pin(3+Tab) TO-220AB
|
||
IRF644PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 250V 14A 3Pin(3+Tab) TO-220AB
|
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