Technical parameters/drain source resistance: 0.18 Ω
Technical parameters/dissipated power: 125 W
Technical parameters/input capacitance: 1300pF @25V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF640
|
Major Brands | 功能相似 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
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|||
IRF640
|
VISHAY | 功能相似 | TO-220-3 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
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||
IRF640
|
Vishay Siliconix | 功能相似 | TO-220-3 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
||
IRF640
|
Harris | 功能相似 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
|||
IRF640
|
ST Microelectronics | 功能相似 | TO-220-3 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
||
IRF640
|
Fairchild | 功能相似 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
|||
IRF640
|
CJ | 功能相似 | TO-220-3 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
||
IRF640
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
||
IRF640
|
NXP | 功能相似 | TO-220 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
||
IRF640
|
Infineon | 功能相似 |
18A , 200V , 0.180 Ohm的N通道功率MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
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