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Model IRF634B_FP001
Description Trans MOSFET N-CH 250V 8.1A 3Pin(3+Tab) TO-220 Tube
Product QR code
Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
3.57  yuan 3.57yuan
5+:
$ 4.8141
25+:
$ 4.4575
50+:
$ 4.2079
100+:
$ 4.1009
500+:
$ 4.0296
2500+:
$ 3.9404
5000+:
$ 3.9048
10000+:
$ 3.8513
Quantity
5+
25+
50+
100+
500+
Price
$4.8141
$4.4575
$4.2079
$4.1009
$4.0296
Price $ 4.8141 $ 4.4575 $ 4.2079 $ 4.1009 $ 4.0296
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8363) Minimum order quantity(5)
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Technical parameters/drain source resistance: 450 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 74 W

Technical parameters/drain source voltage (Vds): 250 V

Technical parameters/leakage source breakdown voltage: 250 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 8.10 A

Technical parameters/rise time: 75 ns

Technical parameters/Input capacitance (Ciss): 1000pF @25V(Vds)

Technical parameters/descent time: 65 ns

Technical parameters/dissipated power (Max): 74W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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PDF
STP80NF55-06 STP80NF55-06 ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP80NF55-06 晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V
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