Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 2W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 3.8A
Technical parameters/Input capacitance (Ciss): 511pF @25V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF5805TRPBF
|
Infineon | 类似代替 | TSOT-23-6 |
INFINEON IRF5805TRPBF 晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
|
||
IRF5805TRPBF
|
International Rectifier | 类似代替 | TSOP-6 |
INFINEON IRF5805TRPBF 晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
|
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