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Model IRF5810TRPBF
Description INFINEON IRF5810TRPBF Dual Field Effect Transistor, MOSFET, Dual P-channel, 2.9 A, -20 V, 90 Mohm, 4.5 V, -1.2 V
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Brand: Infineon
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2212) Minimum order quantity(1)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.09 Ω

Technical parameters/polarity: Dual P-Channel

Technical parameters/dissipated power: 960 mW

Technical parameters/product series: IRF5810

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): -2.90 A

Technical parameters/rise time: 14 ns

Technical parameters/Input capacitance (Ciss): 650pF @16V(Vds)

Technical parameters/rated power (Max): 960 mW

Technical parameters/descent time: 53 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 960 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/length: 3 mm

External dimensions/width: 1.5 mm

External dimensions/height: 1.1 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF7304TRPBF IRF7304TRPBF Infineon 功能相似 SOIC-8
INFINEON IRF7304TRPBF. 场效应管, MOSFET, 双P沟道, 2W, 8-SOIC
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