Technical parameters/drain source resistance: 77 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.7 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 28.0 A
Technical parameters/rise time: 44 ns
Technical parameters/Input capacitance (Ciss): 1700pF @25V(Vds)
Technical parameters/rated power (Max): 3.7 W
Technical parameters/descent time: 43 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3700 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF540NSTRRPBF
|
Infineon | 功能相似 | TO-263-3 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 44Milliohms; ID 33A; D2Pak; PD 130W; VGS +/-20
|
||
IRF540S
|
VISHAY | 完全替代 | TO-263 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRF540SPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRF540STRLPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRF540STRLPBF
|
International Rectifier | 完全替代 |
MOSFET N-CH 100V 28A D2PAK
|
|||
IRF540STRLPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRF540STRRPBF
|
Vishay Intertechnology | 功能相似 | D2PAK |
MOSFET N-CH 100V 28A D2PAK
|
||
IRF540STRRPBF
|
VISHAY | 功能相似 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
||
IRF540STRRPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
MOSFET N-CH 100V 28A D2PAK
|
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