Technical parameters/rated voltage (DC): -55.0 V
Technical parameters/rated current: -31.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.06 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/product series: IRF5305
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: -55.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -31.0 A
Technical parameters/rise time: 66 ns
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 63 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.54 mm
External dimensions/height: 15.24 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
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