Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 17.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.09 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/product series: IRF530N
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 920pF @25V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 920pF @25V(Vds)
Technical parameters/rated power (Max): 70 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.54 mm
External dimensions/height: 15.24 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF540NPBF
|
International Rectifier | 类似代替 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF540NPBF 场效应管, N 通道, MOSFET, 100V, 33A, TO-220AB 新
|
||
IRF540NPBF
|
IRF | 类似代替 |
INTERNATIONAL RECTIFIER IRF540NPBF 场效应管, N 通道, MOSFET, 100V, 33A, TO-220AB 新
|
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