Technical parameters/number of pins: 8
Technical parameters/dissipated power: 6.4 W
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/gain: 11.6 dB
Technical parameters/minimum current amplification factor (hFE): 100 @250mA, 3V
Technical parameters/rated power (Max): 6.4 W
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage (Max): 3.6 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.98 mm
External dimensions/width: 3.99 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Power Management, Consumer Electronics, Portable Devices
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MAX2601ESA
|
Maxim Integrated | 完全替代 | SOIC-8 |
3.6V , 1W RF功率晶体管为900MHz的应用 3.6V, 1W RF Power Transistors for 900MHz Applications
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review