Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 131 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 W
Technical parameters/product series: IRF1405S
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/Continuous drain current (Ids): 131 A
Technical parameters/rise time: 190 ns
Technical parameters/Input capacitance (Ciss): 5480pF @25V(Vds)
Technical parameters/rated power (Max): 200 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB150NF55T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB150NF55T4 晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 4 V
|
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