Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 20.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.5W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rise time: 14.0 ns
Technical parameters/Input capacitance (Ciss): 2890pF @10V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3717
|
Infineon | 功能相似 | SO-8 |
SOIC N-CH 20V 20A
|
||
IRF3717
|
IRF | 功能相似 | SOIC-8 |
SOIC N-CH 20V 20A
|
||
IRF3717TRPBF
|
Infineon | 类似代替 | SOIC-8 |
表面贴装型-N-通道-20V-20A(Ta)-2.5W(Ta)-8-SO
|
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