Technical parameters/power supply voltage (DC): 10.0V (min)
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 625 mW
Technical parameters/descent time (Max): 100 ns
Technical parameters/rise time (Max): 150 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 16.8 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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IFC | 类似代替 |
INFINEON IR21531SPBF 双路驱动器芯片, MOSFET, 半桥, 10V-16.8V电源, 660ns延迟, SOIC-8
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IRF | 类似代替 |
INFINEON IR21531SPBF 双路驱动器芯片, MOSFET, 半桥, 10V-16.8V电源, 660ns延迟, SOIC-8
|
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IR21531SPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IR21531SPBF 双路驱动器芯片, MOSFET, 半桥, 10V-16.8V电源, 660ns延迟, SOIC-8
|
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LM5109AMA/NOPB
|
National Semiconductor | 功能相似 | SOIC-8 |
TEXAS INSTRUMENTS LM5109AMA/NOPB 驱动器芯片, MOSFET, 驱动器, 半桥, 8V-14V电源, 1A输出, 30ns延迟, SOIC-8
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LM5109AMA/NOPB
|
TI | 功能相似 | SOIC-8 |
TEXAS INSTRUMENTS LM5109AMA/NOPB 驱动器芯片, MOSFET, 驱动器, 半桥, 8V-14V电源, 1A输出, 30ns延迟, SOIC-8
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