Technical parameters/working voltage: 36.0V (max)
Technical parameters/rated power: 2.5 W
Technical parameters/number of output interfaces: 1
Technical parameters/Input voltage (DC): 5.50 V
Technical parameters/output current: 6 A
Technical parameters/drain source resistance: 0.05 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IPS1031R
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/output current (Max): 3 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Technical parameters/input voltage: 4.5V ~ 5.5V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VND7NV04TR-E
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS VND7NV04TR-E 晶体管, MOSFET, N沟道, 6 A, 45 V, 0.06 ohm, 5 V, 500 mV
|
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