Technical parameters/rated power: 63 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.54 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 63 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 7.3A
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 557pF @100V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 63W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: PWM stages (TTF, LLC) for, PFC stages for, , telecom rectifier,
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPP60R600CP
|
Infineon | 类似代替 | TO-220-3 |
的CoolMOS功率晶体管 CoolMOS Power Transistor
|
||
IPP60R600P6
|
Infineon | 类似代替 | TO-220-3 |
TO-220 N-CH 650V 7.3A
|
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