Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0095 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 38 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 3 ns
Technical parameters/Input capacitance (Ciss): 1500pF @15V(Vds)
Technical parameters/descent time: 2.4 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 38W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.36 mm
External dimensions/width: 15.95 mm
External dimensions/height: 4.57 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Automotive, Automotive, Power Management, Consumer Electronics, Motor Drive&Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP8880
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP8880 晶体管, MOSFET, N沟道, 54 A, 30 V, 11.6 mohm, 10 V, 2.5 V
|
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