Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 88W (Tc)
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 6580pF @25V(Vds)
Technical parameters/descent time: 44 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 88W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3-1
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 9.25 mm
External dimensions/packaging: TO-262-3-1
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump, High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
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