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Model IPI040N06N3GXKSA1
Description Infineon OptiMOS™3 Power MOSFET, 60 to 80V OptiMOS ™ The product provides high-performance packaging that can handle the most challenging applications and offers full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the more stringent next-generation voltage regulation standards in computer applications. Fast switching MOSFET for SMPS optimization technology, suitable for JEDEC1 specification N-channel DC/DC converters that meet target applications, with excellent logic level gate charge x R DS (on) products (FOM) and extremely low on resistance R DS (on) lead-free plating # # MOSFET transistors, Infineon Infineon's large and comprehensive MOSFET device portfolio including OptiMOS ™ With CoolMOS ™ Series. These products offer top-notch performance in the latest generation of state-of-the-art power MOSFETs
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Brand: Infineon
Packaging TO-262-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.01  yuan 4.01yuan
5+:
$ 5.4149
25+:
$ 5.0138
50+:
$ 4.7330
100+:
$ 4.6127
500+:
$ 4.5324
2500+:
$ 4.4322
5000+:
$ 4.3920
10000+:
$ 4.3319
Quantity
5+
25+
50+
100+
500+
Price
$5.4149
$5.0138
$4.7330
$4.6127
$4.5324
Price $ 5.4149 $ 5.0138 $ 4.7330 $ 4.6127 $ 4.5324
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9809) Minimum order quantity(5)
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Technical parameters/rated power: 188 W

Technical parameters/number of channels: 1

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 188 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 90A

Technical parameters/rise time: 70 ns

Technical parameters/Input capacitance (Ciss): 11000pF @30V(Vds)

Technical parameters/rated power (Max): 188 W

Technical parameters/descent time: 5 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 188 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-262-3

External dimensions/length: 10.36 mm

External dimensions/width: 4.52 mm

External dimensions/height: 9.45 mm

External dimensions/packaging: TO-262-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Isolated DC-DC converters, Or-ing switches, Synchronous rectification

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IPI040N06N3G IPI040N06N3G Infineon 功能相似 TO-262
60V,4mΩ,90A,N沟道功率MOSFET
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