Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 1820pF @75V(Vds)
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.2 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.45 mm
External dimensions/packaging: TO-262-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB108N15N3G
|
Infineon | 功能相似 | TO-263-3-2 |
OptiMOSTM3电源晶体管特性优良的栅极电荷X R DS ( ON)的乘积( FOM ) OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
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