Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 90.0 A
Technical parameters/input capacitance: 5.20 nF
Technical parameters/gate charge: 40.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 90.0 A
Technical parameters/Input capacitance (Ciss): 5200pF @15V(Vds)
Technical parameters/rated power (Max): 115 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPA06N80C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPA06N80C3 功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
|
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