Technical parameters/working voltage: 376 V
Technical parameters/breakdown voltage: 418 V
Technical parameters/clamp voltage: 602 V
Technical parameters/peak pulse power: 400 W
Technical parameters/minimum reverse breakdown voltage: 418 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-204AL-2
External dimensions/packaging: DO-204AL-2
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Micro Commercial Components | 功能相似 | DO-41 |
Trans Voltage Suppressor Diode, 400W, 376V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
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LiteOn | 功能相似 | DO-41 |
Trans Voltage Suppressor Diode, 400W, 376V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
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Panjit | 功能相似 | DO-41 |
Trans Voltage Suppressor Diode, 400W, 376V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
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Won-Top Electronics | 功能相似 | DO-41 |
Trans Voltage Suppressor Diode, 400W, 376V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
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Comchip Technology | 功能相似 |
Trans Voltage Suppressor Diode, 400W, 376V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
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