Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 100A
Technical parameters/Input capacitance (Ciss): 6100pF @30V(Vds)
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-2
External dimensions/packaging: TO-263-2
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPD048N06L3G
|
Infineon | 功能相似 | TO-252 |
60V,4.8mΩ,90A,N沟道功率MOSFET
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||
NP89N055PUK-E1-AY
|
Renesas Electronics | 功能相似 | TO-263-3 |
MOS场效应 MOS FIELD EFFECT TRANSISTOR
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