Technical parameters/rated power: 188 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.003 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 188 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 90A
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 8000pF @30V(Vds)
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 188000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10 mm
External dimensions/width: 9.25 mm
External dimensions/height: 4.4 mm
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Or-ing switches, Industrial, Industrial, Isolated DC-DC converters, Power Management, Synchronous rectification, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB037N06N3G
|
Infineon | 完全替代 | TO-263-3 |
60V,90A,N沟道功率MOSFET
|
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