Technical parameters/rated power: 33 W
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 33 W
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Continuous drain current (Ids): 8A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1100pF @100V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 33W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.65 mm
External dimensions/width: 4.85 mm
External dimensions/height: 16.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPA80R650CEXKSA2
|
Infineon | 类似代替 | TO-220-3 |
晶体管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V
|
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