Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 2.4 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 120A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 12120pF @25V(Vds)
Technical parameters/rated power (Max): 188 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 188 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 9.25 mm
External dimensions/packaging: TO-262-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK9E2R8-60E,127
|
NXP | 功能相似 | TO-262-3 |
I2PAK N-CH 60V 120A
|
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