Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Description Infineon OptiMOS™ T2 Power MOSFET Infineon's new OptiMOS ™ - T2 has a series of energy-saving MOSFET transistors that can reduce CO2 and be driven by electricity. New OptiMOS ™ - The T2 product series extends the existing OptiMOS ™ - T and OptiMOS ™ Series. OptiMOS ™ The product provides high-performance packaging that can handle the most challenging applications and offers full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the more stringent next-generation voltage regulation standards in computer applications. N-channel - Enhanced Mode AEC Qualified MSL1 up to 260 ° C Peak Reflow Soldering 175 ° C Operating Temperature Green Product (RoHS Compliant) # # # MOSFET Transistors, Infineon Infineon's extensive and comprehensive MOSFET equipment portfolio including OptiMOS ™ With CoolMOS ™ Series. These products offer top-notch performance in the latest generation of state-of-the-art power MOSFETs
Product QR code
Brand: Infineon
Packaging TO-262-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.59  yuan 10.59yuan
5+:
$ 12.3880
50+:
$ 11.8586
200+:
$ 11.5621
500+:
$ 11.4880
1000+:
$ 11.4139
2500+:
$ 11.3292
5000+:
$ 11.2762
7500+:
$ 11.2233
Quantity
5+
50+
200+
500+
1000+
Price
$12.3880
$11.8586
$11.5621
$11.4880
$11.4139
Price $ 12.3880 $ 11.8586 $ 11.5621 $ 11.4880 $ 11.4139
Start batch production 5+ 50+ 200+ 500+ 1000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6181) Minimum order quantity(5)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 2.4 mΩ

Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60 V

Technical parameters/Continuous drain current (Ids): 120A

Technical parameters/rise time: 5 ns

Technical parameters/Input capacitance (Ciss): 12120pF @25V(Vds)

Technical parameters/rated power (Max): 188 W

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 188 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-262-3

External dimensions/length: 10 mm

External dimensions/width: 4.4 mm

External dimensions/height: 9.25 mm

External dimensions/packaging: TO-262-3

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BUK9E2R8-60E,127 BUK9E2R8-60E,127 NXP 功能相似 TO-262-3
I2PAK N-CH 60V 120A
PDF

Newly listed products

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear