Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 4A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
D21-1-5
|
Renesas Electronics | 功能相似 |
TRANSISTOR,BJT,NPN,60V V(BR)CEO,2A I(C),TO-252VAR
|
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